 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| MICRONAS INTERMETALL HAL115 Hall Effect Sensor IC MICRONAS Edition May 7, 1997 6251-414-1DS HAL115 Hall Effect Sensor IC in CMOS technology Features: - operates from 4.3 to 24 V supply voltage with reverse voltage protection - operates with magnetic fields from DC to 20 kHz - overvoltage and reverse-voltage protection - on-chip temperature compensation circuitry minimizes shifts in on and off points and hysteresis over temperature and supply voltage - the decrease of magnetic flux density caused by rising temperature in the sensor system is compensated by a built-in negative temperature coefficient of hysteresis - ideal sensor for speed measurement, revolution counting, positioning, and DC brushless motors - short-circuit protection Specifications - switching type: bipolar - output turns low with magnetic south pole on branded side of package - output can change, if magnetic pole is removed Example: HAL115UA-E Type: 115 Package: TO-92UA Temperature Range: TJ = -40 C to +100 C Solderability - Package SOT-89A: according to IEC68-2-58 - Package TO-92UA: according to IEC68-2-20 VDD 1 OUT Marking Code Type Temperature Range E HAL 115UA HAL 115S 115E 115E C 115C 115C Operating Junction Temperature Range E: TJ = -40 C to +100 C C: TJ = 0 C to +100 C Designation of Hall Sensors HALXXXPP-T Temperature Range: E or C Package:UA for TO-92UA, S for SOT-89A Type: 115 3 2 GND Fig. 1: Pin configuration 2 MICRONAS INTERMETALL HAL115 Functional Description This Hall effect sensor is a monolithic integrated circuit that switches in response to magnetic fields. If a magnetic field with flux lines at right angles to the sensitive area is applied to the sensor, the biased Hall plate forces a Hall voltage proportional to this field. The Hall voltage is compared with the actual threshold level in the comparator. The temperature-dependent bias increases the supply voltage of the Hall plates and adjusts the switching points to the decreasing induction of magnets at higher temperatures. If the magnetic field exceeds the threshold levels, the open drain output switches to the appropriate state. The built-in hysteresis eliminates oscillation and provides switching behavior of output without bounce. The output is short-circuit protected by limiting high currents and by sensing excess temperature. Shunt protection devices clamp voltage peaks at the Output-Pin and VDD-Pin together with external series resistors. Reverse current is limited at the VDD-Pin by an internal series resistor up to -15 V. No external reverse protection diode is needed at the VDD-Pin for values ranging from 0 V to -15 V. Outline Dimensions 4.5 +0.1 0.1 +0.05 0.7 1.7 2 2.25 0.95 3.1 +0.2 4.0 0.25 0.4 1.5 +0.1 0.4 1.5 3.0 1 2 3 0.4 2.5 +0.1 sensitive area position of hall sensor referenced to the center of package x = 0 0.1 mm y = 0.3 0.1 mm (0.4 mm x 0.2 mm) top view 10 branded side max. 0.05 -0.05 10 Fig. 3: Plastic Small Outline Transistor Package (SOT-89A) Weight approximately 0.04 g Dimensions in mm HAL115 VDD 1 Reverse Voltage & Overvoltage Protection Temperature Dependent Bias Hysteresis Control Short Circuit & Overvoltage Protection 1.5+0.1 0.3 4.06+0.1 2.03 1.0 Hall Plate Comparator Output 3 GND 2 0.36 1 2 3 12.7 min. 3+0.1 OUT sensitive area position of hall sensor referenced to the center of package x = 0 0.1 mm y = 0.5 0.1 mm (0.4 mm x 0.2 mm) Fig. 2: HAL115 block diagram 0.4 1.27 1.27 2.54 branded side 45 0.8 Fig. 4: Plastic Transistor Single Outline Package (TO-92UA) Weight approximately 0.12 g Dimensions in mm MICRONAS INTERMETALL 3 HAL115 Absolute Maximum Ratings Symbol VDD VOH IO IO -IDD Ts TJ 1) 2) Parameter Supply Voltage Output Off Voltage Continuous Output On Current Peak Output On Current Reverse Supply Current Storage Temperature Range Junction Temperature Range Pin No. 1 3 3 3 1 Min. -15 - - - Max. 281) 281) 20 2502) 251) Unit V V mA mA mA C C -65 -40 150 150 as long as TJmax is not exceeded t < 2 ms Stresses beyond those listed in the "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only. Functional operation of the device at these or any other conditions beyond those indicated in the "Recommended Operating Conditions/Characteristics" of this specification is not implied. Exposure to absolute maximum ratings conditions for extended periods may affect device reliability. Recommended Operating Conditions Symbol VDD IO RS Parameter Supply Voltage Continuous Output On Current Series Resistor Pin No. 1 3 1 Min. 4.3 0 - Typ. - - - Max. 24 12.5 270 Unit V mA Electrical Characteristics at TJ = -40 C to +100 C, VDD = 4.3 V to 24 V, Typical Characteristics for TJ = 25 C and VDD = 12 V Symbol VOL VOL IOH IOH IDD IDD Parameter Output Voltage Output Voltage over Temperature Range Output Leakage Current Pin No. 3 3 Min. - - Typ. 125 125 Max. 250 400 Unit mV mV A A Test Conditions IO = 12.5 mA, TJ = 25 C IO = 12.5 mA B < BOFF, TJ = 25 C VDD 20 V B < BOFF TJ = 25 C, VDD = 12 V 3 - - 1 Output Leakage Current over Temperature Range Supply Current Supply Current over Temperature Range 3 - - 10 1 1 6.5 5.5 8.3 8.3 11 12 mA mA 4 MICRONAS INTERMETALL HAL115 Electrical Characteristics, continued Symbol ten(O) tr tf RthJSB case SOT-89A RthJA case TO-92UA Parameter Enable Time of Output after Setting of VDD Output Rise Time Pin No. 3 Min. - Typ. 6 Max. 50 Unit s Test Conditions VDD = 12 V VDD = 12 V, RL = 820 Ohm, CL = 20 pF VDD = 12 V, RL = 820 Ohm, CL = 20 pF Fiberglass Substrate, 30 mm x 10 mm x 1,5mm pad size see Fig. 6 Leads at ambient temperature at a distance of 2 mm from case 3 - 85 400 ns Output Fall Time 3 - 60 400 ns Thermal Resistance Junction to Substrate Backside - 150 200 K/W Thermal Resistance Junction to Soldering Point - 150 200 K/W Magnetic Characteristics at TJ = -40 C to +100 C, VDD = 4.3 V to 24 V, Typical Characteristics for TJ = 25 C and VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter On point BON Off point BOFF Hysteresis BHYS Min. -10.7 -12.5 1.8 Typ. 1.2 -1.2 2.4 Max. 12.5 10.7 7 Unit mT mT mT 5.0 Output Voltage 2.0 BOFF min 0 BON max 1.0 2.0 BHYS Fig. 5: Definition of magnetic switching points and hysteresis Fig. 6: Recommended pad size SOT-89A Dimensions in mm MICRONAS INTERMETALL 5 HAL115 Note 1: In the following diagrams "Magnetic switch points versus ambient temperature", the curves for BONmin, BONmax, BOFFmin, and BOFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. Note 2: The dropping characteristic of the supply current versus the supply voltage is caused by the internal power dissipation. Typical hysteresis versus ambient temperature mT 6 HAL 115 BHYS 5 4 VDD = 3.0 V 3 VDD = 4.5 V VDD = 24 V 2 1 0 -50 0 50 100 TA 150 C Magnetic switching points versus ambient temperature mT 20 VDD = 12 V BON, BOFF 10 BONmax BOFFmax Typical output low voltage versus ambient temperature mV 400 IO = 12.5 mA HAL 115 HAL 115 VOL 300 BONtyp 0 BOFFtyp 200 VDD = 4.5 V VDD = 24 V BONmin BOFFmin -10 100 -20 -50 0 50 100 TA,TJ 150 C 0 -50 0 50 100 TA 150 C 6 MICRONAS INTERMETALL HAL115 Application Note Typical supply current versus ambient temperature mA 14 HAL 115 Because of inherent reverse voltage protection, no diode is needed at pin 1 for reverse voltages ranging from 0 V to -15 V. For electromagnetic immunity, it is recommended to apply a 330 pF minimum capacitor between VDD (pin 1) and Ground (pin 2). For applications requiring robustness to conducted disturbances (transients), a 220 series resistor to pin 1 and a 4.7 nF capacitor between VDD (pin 1) and Ground (pin 2) is recommended. Because of the IDD peak at 4.1 V, the series resistor should not be greater than 270 . The series resistor and the capacitor should be placed as close as possible to the IC. 12 IDD 10 VDD = 4.5 V 8 VDD = 24 V 6 4 2 0 -50 0 50 100 TA 150 C Ambient Temperature Due to the internal power dissipation, the temperature on the silicon chip (junction temperature TJ) is higher than the temperature outside the package (ambient temperature TA). TJ = TA + T Typical supply current versus supply voltage mA 14 At static conditions, the following equations are valid: - for SOT-89A: HAL 115 T = IDD * VDD * RthJSB T = IDD * VDD * RthJA - for TO-92UA: 12 IDD 10 TA = 0 C 8 TA = 25 C TA = 100 C For typical values, use the typical parameters. For worst case calculation, use the max. parameters for IDD and Rth, and the max. value for VDD from the application. Recommended Application Circuit for DC Fans VDD 6 4 3.3 k 2 1 HAL115 3 2 R1 L1 R2 3.3 k L2 0 0 5 10 15 20 25 VDD 30 V 2.2 /50 V C1 see note 2 2.2 /50 V C2 MICRONAS INTERMETALL 7 HAL115 Data Sheet History 1. Final data sheet: "HAL 115 Hall Effect Sensor IC", May 7, 1997, 6251-414-1DS. First release of the final data sheet. MICRONAS INTERMETALL GmbH Hans-Bunte-Strasse 19 D-79108 Freiburg (Germany) P.O. Box 840 D-79008 Freiburg (Germany) Tel. +49-761-517-0 Fax +49-761-517-2174 E-mail: docservice@intermetall.de Internet: http://www.intermetall.de Printed in Germany by Simon Druck GmbH & Co., Freiburg (05/97) Order No. 6251-414-1DS All information and data contained in this data sheet are without any commitment, are not to be considered as an offer for conclusion of a contract nor shall they be construed as to create any liability. Any new issue of this data sheet invalidates previous issues. Product availability and delivery dates are exclusively subject to our respective order confirmation form; the same applies to orders based on development samples delivered. By this publication, MICRONAS INTERMETALL GmbH does not assume responsibility for patent infringements or other rights of third parties which may result from its use. Reprinting is generally permitted, indicating the source. However, our prior consent must be obtained in all cases. 8 MICRONAS INTERMETALL End of Data Sheet Multimedia ICs MICRONAS Back to Summary Back to Data Sheets |
Price & Availability of HAL115
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |